High Speed Infrared Emitting Diodes
www.vishay.com
VSMY2850RG, VSMY2850G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitte...
Description
www.vishay.com
VSMY2850RG, VSMY2850G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY2850RG
VSMY2850G
DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR illumination
FEATURES Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: λp = 850 nm High reliability High radiant power Very high radiant intensity Angle of half intensity: ϕ = ± 10° Suitable for high pulse current operation Terminal configurations: gullwing or reverse gullwing Package matches with detector VEMD2500X01 series Floor life: 4 weeks, MSL 2a, according to J-STD-020 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
COMPONENT VSMY2850RG VSMY2850G
Ie (mW/sr) 125 125
Note Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE VSMY2850RG VSMY2850G
Note MOQ: minimum order quantity
PACKAGING Tape and reel Tape and reel
ϕ (deg) ± 10 ± 10
λP (nm) 850 850
tr (ns) 10 10
REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ:...
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