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VSMY2850RG Dataheets PDF



Part Number VSMY2850RG
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High Speed Infrared Emitting Diodes
Datasheet VSMY2850RG DatasheetVSMY2850RG Datasheet (PDF)

www.vishay.com VSMY2850RG, VSMY2850G Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG VSMY2850G DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Miniature light .

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www.vishay.com VSMY2850RG, VSMY2850G Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG VSMY2850G DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 10° • Suitable for high pulse current operation • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2500X01 series • Floor life: 4 weeks, MSL 2a, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY COMPONENT VSMY2850RG VSMY2850G Ie (mW/sr) 125 125 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSMY2850RG VSMY2850G Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel ϕ (deg) ± 10 ± 10 λP (nm) 850 850 tr (ns) 10 10 REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing Rev. 1.6, 31-Jul-2018 1 Document Number: 83398 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSMY2850RG, VSMY2850G Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction-to-ambient tp/T = 0.5, tp = 100 μs tp = 100 μs According to Fig. 10, J-STD-020 EIA / JESD51 VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 190 100 -40 to +85 -40 to +100 260 250 UNIT V mA mA A mW °C °C °C °C K/W PV - Power Dissipation (mW) IF - Forward Current (mA) 200 180 160 140 120 100 80 RthJA = 250 K/W 60 40 20 0 0 21890 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 120 100 80 60 RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21891 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA VF VF TKVF IR CJ Ie Ie φe TKφe - 1.6 1.9 - 2.8 - -1.5 Not designed for reverse operation - 50 70 125 210 - 1000 - 55 - - -0.12 - Angle of half intensity ϕ - ± 10 - Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time IF = 100 mA λp 840 850 870 IF = 30 mA Δλ - 30 - IF = 30 mA TKλp - 0.25 - IF = 100 mA, 10 % to 90 % tr - 10 - IF = 100 mA, 10 % to 90 % tf - 10 - UNIT V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns Rev. 1.6, 31-Jul-2018 2 Document Number: 83398 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSMY2850RG, VSMY2850G Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) IF - Forward Current (mA) 1000 tp = 100 μs 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Ie, rel - Relative Radiant Intensity (%) 115 IF = 100 mA, 110 tp = 20 ms 105 100 95 90 85 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature VF, rel - Relative Forward Voltage (%) 110 IF = 100 mA, tp = 20 ms 105 100 95 90 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 10 tp = 100 μs 1 Ie,rel - Relative Radiant Intensity (Ie / Ie(100 mA)) 0.1 10 100 IF - Forward Current (mA) 1000.


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