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VSMY2850RG, VSMY2850G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY2850RG
VSMY2850G
DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination
FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 10° • Suitable for high pulse current operation • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2500X01 series • Floor life: 4 weeks, MSL 2a, according to J-STD-020 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
COMPONENT VSMY2850RG VSMY2850G
Ie (mW/sr) 125 125
Note • Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE VSMY2850RG VSMY2850G
Note • MOQ: minimum order quantity
PACKAGING Tape and reel Tape and reel
ϕ (deg) ± 10 ± 10
λP (nm) 850 850
tr (ns) 10 10
REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM Reverse gullwing
Gullwing
Rev. 1.6, 31-Jul-2018
1 Document Number: 83398
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSMY2850RG, VSMY2850G
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction-to-ambient
tp/T = 0.5, tp = 100 μs tp = 100 μs
According to Fig. 10, J-STD-020 EIA / JESD51
VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
VALUE 5
100 200
1 190 100 -40 to +85 -40 to +100 260 250
UNIT V mA mA A
mW °C °C °C °C K/W
PV - Power Dissipation (mW) IF - Forward Current (mA)
200
180
160
140 120
100
80 RthJA = 250 K/W 60 40
20
0 0
21890
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 250 K/W 40
20
0 0 10 20 30 40 50 60 70 80 90 100
21891
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
Forward voltage
Temperature coefficient of VF Reverse current Junction capacitance
Radiant intensity
Radiant power Temperature coefficient of radiant power
IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms
IF = 100 mA
VF VF TKVF IR CJ Ie Ie φe
TKφe
- 1.6 1.9 - 2.8 - -1.5 Not designed for reverse operation - 50 70 125 210 - 1000 - 55 -
- -0.12 -
Angle of half intensity
ϕ - ± 10 -
Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time
IF = 100 mA
λp 840 850 870
IF = 30 mA
Δλ - 30 -
IF = 30 mA
TKλp - 0.25 -
IF = 100 mA, 10 % to 90 %
tr
- 10 -
IF = 100 mA, 10 % to 90 %
tf
- 10 -
UNIT V V
mV/K μA pF
mW/sr mW/sr
mW
%/K
deg nm nm nm/K ns ns
Rev. 1.6, 31-Jul-2018
2 Document Number: 83398
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSMY2850RG, VSMY2850G
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
IF - Forward Current (mA)
1000
tp = 100 μs
100
10
1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Ie, rel - Relative Radiant Intensity (%)
115 IF = 100 mA,
110 tp = 20 ms
105
100
95
90
85 -60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
VF, rel - Relative Forward Voltage (%)
110 IF = 100 mA, tp = 20 ms
105
100
95
90 -60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
10 tp = 100 μs
1
Ie,rel - Relative Radiant Intensity (Ie / Ie(100 mA))
0.1 10
100
IF - Forward Current (mA)
1000.