VSMY7852X01

www.DataSheet.co.kr VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP = 15 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20783 DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA. AAPPLICATIONS Infrared illumination for CMOS cameras (CCTV) Driver assistance systems Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7852X01 Ie (mW/sr) 42  (deg) ± 60 p (nm) 850 tr (ns) 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY7852X01-GS08 Note MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little Star ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless o...