AON7426

www.DataSheet.co.kr AON7426 30V N-Channel MOSFET General Description The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 40A < 5.5mΩ < 8.3mΩ ESD protected 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 2 3 4 8 7 6 5 G Pin 1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Power Dissipation B Power Dissipation A C Maximum 30 ±20 40 31 130 18.6 14.9 35 14 3.1 2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM PD PDSM TJ, TSTG A W W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3 Max 40 75 3.6 Units ° C/W ° C/W ° C/W Rev 1: Feb 2010 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7426 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS ...