AON7450

www.DataSheet.co.kr AON7450 100V N-Channel MOSFET SDMOS TM General Description The AON7450 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 8V) 100V 21A < 48mΩ < 57mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom 1 2 3 4 D Top View 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 100 ±25 21 13 60 5.6 4.5 18 16 43 17 3.1 2 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 2.4 Max 40 75 2.9 Units ° C/W ° C/W ° C/W Rev 2: Mar. 2011 www.aosmd.com Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7450 Electrical Characteristics (TJ=25° C...