2SB647A

2SB647, 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 –2 0.9 150 –55 to +150 2SB647A –120 –100 –5 –1 –2 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) 2SB647 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max Min — — — –10 320 — –1 Typ Max Unit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 Typ –120 — –80 –5 — 60 30 — — — — — — — — — — — 140 20 –120 — –100 — –5 — 60 30 — — — — — — — 140 20 –1.5 — — — — — –1.5 V — — MHz VCE = –5 V, IC = –150 mA pF VCB = –10 V, IE = 0 f = 1 MHz Collector output capacitance Cob Notes: 1. The 2SB647 a...