2SB649

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 2SB649 –180 –120 –5 –1.5 –3 1 20 150 –55 to +150 2SB649A –180 –160 –5 –1.5 –3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SB649, 2SB649A Electrical Characteristics (Ta = 25°C) 2SB649 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB649A Max — — — –10 320 — –1 –1.5 — — Min Typ Max — — — –10 200 — –1 –1.5 — — V V MHz pF Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = 1 MHz Min Typ –180 — –120 — –5 — 60 30 — — — — — — — — — — 140 27 –180 — –160 — –5 — 60 30 — — — — — — — — — — 140 27 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandw...