SIZ300DT

New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () 0.0240 at VGS = 10 V Channel-1 30 0.0320 at VGS = 4.5 V 0.0110 at VGS = 10 V Channel-2 30 0.0165 at VGS = 4.5 V ID (A)a Qg (Typ.) 11 3.5 nC 11 28 6.8 nC 28 PowerPAIR® 3 x 3 Pin 1 S1/D2 8 G2 7 (Pin 9) S2 6 S2 5 S2 G1 D1 1 2 D1 3 4 3 mm D1 D1 3 mm Ordering Information: SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES PowerPAIR Optimizes High-Side and Low-Side MOSFETs for Synchronous Buck Converters TrenchFET® Power Mosfets 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Computing System Power POL Synchronous Buck Converter D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Avalanche Current Single Pulse Avalanche Energy VDS 30 V VGS ± 20 TC = 25 °C 11a 28a TC = 70 °C TA = 25 °C ID 11a 9.8b, c 28a 14.9b, c TA = 70 °C IDM 7.8b, c 30 11.9b, c 40 A TA = 25 °C IS TA = 25 °C 11a 3.2b, c 26 3.8b, c L = 0.1 mH IAS 12 EAS 7 15 11 mJ TC = 25 °C 16.7 31 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 10.7 3.7b, c 20 4.2b, c W TA = 70 °C 2.4b, c 2....