2SJ325

www.DataSheet.co.kr SMD Type MOS Field Effect Power Transistors 2SJ325 Features Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s; d 1%. Tch Tstg Symbol VDSS VGSS VGSS ID ID PD Rating -30 -20,+10 20 4.0 16 20 1.0 150 -55 to +150 Unit V V V A A W W 3.80 (VGS=-4V,ID=-1.6A) www.kexin.com.cn 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SMD Type 2SJ325 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-30V,VGS=0 VGS= 16V,VDS=0 -1.0 3.0 Min MOSFET IC Typ Max -10 10 Unit A A V S VGS(off...