TLP781

TOSHIBA Photocoupler IRED & Photo−Transistor TLP781, TLP781F TLP781/TLP781F Office Equipment Home Electric Appliances Solid-State Relays Switching Power Supplies Contactless Controller Outputs Simplex/Multiplex Data Transmission TLP781 Unit: mm The TOSHIBA TLP781 consists of a silicone photo−transistor optically coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5000 Vrms (min)).  TLP781 : 7.62mm pitch type DIP4  TLP781F : 10.16mm pitch type DIP4  Collector-emitter voltage: 80 V (min)  Current transfer ratio: 50 % (min) Rank GB: 100 % (min)  Isolation voltage: 5000 Vrms (min)  UL recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-approved : EN 60747-5-5 (Note 1) TOSHIBA Weight: 0.25g (typ.) TLP781F ― Unit: mm Note 1 : When a VDE approved type is needed, please designate the Option (D4).  Construction mechanical rating 7.62mm Pitch 10.16mm Pitch Standard Type TLPxxxF Type Creepage distance 6.5mm (min) 8.0mm (min) Clearance 6.5mm (min) 8.0mm (min) Insulation thickness 0.4mm (min) 0.4mm (min) TOSHIBA ― Weight: 0.25g (typ.) 1 4 Pin Configurations (top view) 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-07 2019-03-11 Current Transfer Ratio TLP781/TLP781F Type TLP781 Classification (Note 1) (None) Rank Y Rank GR Rank BL Ra...