isc Silicon PNP Power Transistor
2SB834
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in audio frequency power amp...
