IXGX28N140B3H1

www.DataSheet.co.kr GenX3TM 1400V IGBTs w/ Diode Avalanche Rated IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 VCES = 1400V IC110 = 28A VCE(sat) ≤ 3.60V TO-247 (IXGH) G C E Tab Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC TC TC TC = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Ratings 1400 1400 ±20 ±30 60 28 15 150 28 360 ICM = 120 @ VCES < VCE 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A mJ A W °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate C = Collector Features z PLUS247 (IXGX) G C E Tab TO-264 (IXGK) TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C G C E Tab E = Emitter Tab = Collector Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (IXGH & IXGK) Mounting Force (IXGX) TO-247 & PLUS247 TO-264 300 260 1.13/10 20..120/4.5..27 6 10 z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE Note 2, TJ = 125°C VCE = 0V, VGE = ±20V IC = IC110, VGE = 15V, Note 1 TJ = 125°C VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3.0 5.0 V 50 μA 1 mA ±100 nA 3.00 3.05 3.60 V z High Power Density Low Gate Drive Requir...