2SB709A

Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 –0.3 +0.2 Unit: mm s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 1.1 –0.1 +0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg –45 –45 –7 –200 –100 200 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 Parameter Symbol Ratings Unit max – 0.1 –100 0.16 –0.06 s Absolute Maximum Ratings 2 (Ta=25˚C) +0.1 0.4 –0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 +0.1 1.45 Unit µA µA V...