2SB716

2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB715 –100 –100 –5 –50 750 150 –55 to +150 2SB716 –120 –120 –5 –50 750 150 –55 to +150 2SB716A –140 –140 –5 –50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SB715 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol Min Typ Max — — –0.5 — 800 — 2SB716 Min Typ Max — — — –0.5 800 — 2SB716A Min Typ Max — — — –0.5 500 — –0.75 V –0.2 — — V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ VCB = –80 V, I E = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA V(BR)CBO –100 — V(BR)CEO –100 — ICBO — — — — — — — — 150 1.8 –120 — –120 — — — 250 125 — — — — — — 150 1.8 –140 — –140 — — — 250 125 — — — — — — 150 1.8 DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE 1 250 125 — — — — –0.75 — –0.2 — — — — — –0.75 — –0.2 — — — — — VCE(sat) Gain bandwidth product fT Collector ...