isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
:VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Curr...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
:VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain-
: hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 5.0
UNIT ℃/W
2SC1061
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 20V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= ...