2SB738

2SB738, 2SB739 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB738 –20 –16 –6 –2 0.9 150 –55 to +150 2SB739 –20 –20 –6 –2 0.9 150 –55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) 2SB738 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SB739 Max Min — — — –2 –20 –20 –6 — Typ — — — — — — — 150 50 Max Unit Test conditions — — — –2 V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –6 V, IC = 0 VCE = –2 V, IC = –0.1 A I C = –1 A, IB = –0.1 A Typ — — — — — — — 150 50 –20 –16 –6 — — 100 — — — –0.2 — 320 100 –0.2 µA 320 –0.3 V — — VCE(sat) fT –0.3 — — — — — MHz VCE = –2 V, IC = –10 mA pF VCB = –10 V, IE = 0, f = 1 MHz Collector output capacitance Cob Note: B 100 to 200 1. The 2SB738 and 2SB739 are grouped by h FE as follows. C 160 to 320 2 2SB738, 2SB739 Maximum Collecto...