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2SB768 Dataheets PDF



Part Number 2SB768
Manufacturers NEC
Logo NEC
Description PNP Transistor
Datasheet 2SB768 Datasheet2SB768 Datasheet (PDF)

DATA SHEET SILICON POWER TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION The 2SB768 is designed for Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −150 V • Complement to 2SD1033 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −200 V Collector to Emitter Voltage VCEO −150 V Emitter to Base Voltage VEBO −5 V Collector Current (DC) IC(DC) −2 A Collector Current (pulse) Note .

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Document
DATA SHEET SILICON POWER TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION The 2SB768 is designed for Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −150 V • Complement to 2SD1033 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −200 V Collector to Emitter Voltage VCEO −150 V Emitter to Base Voltage VEBO −5 V Collector Current (DC) IC(DC) −2 A Collector Current (pulse) Note 1 IC(pulse) −3 A Total Power Dissipation (TA = 25°C) Note 2 PT 2.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 2.3 ±0.3 0.5 ±0.1 2.3 ±0.3 0.5 ±0.1 0.15 ±0.15 TO-252 (MP-3Z) 1. Base 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18264EJ4V0DS00 (4th edition) (Previous No. TC-1625A) Date Published July 2006 NS CP(K) Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 1985, 2006 2SB768 2 Data Sheet D18264EJ4V0DS 2SB768 3 Data Sheet D18264EJ4V0DS 2SB768 • The information in this document is current as of July, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this do.


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