2SB774

Transistor 2SB774 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm s Features q q 5.0±0.2 4.0±0.2 High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA VCE = –2V, IC = –100mA IC = –100mA, IB = –10mA VCB = –10V, IE = 2mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –1 –100 Unit µA µA V V V –30 –25 –15 210 90 –0.5 150 4 460 V MHz pF *h FE1 Rank classification R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC — Ta 500 –240 Ta=25˚C ...