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IXGH48N60C3D1

IXYS Corporation

GenX3 600V IGBT

www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 ...


IXYS Corporation

IXGH48N60C3D1

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www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 48 30 250 30 300 ICM = 100 @VCE < 600 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A A mJ A V W °C °C °C °C °C Nm/lb.in g Features z z z z z z G C E ( TAB ) G = Gate E = Emitter C = Collector TAB = Collector Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Fast Switching Avalanche Rated International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 300 μA 1.75 mA ±100 2.3 1.8 2.5 nA V V z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp B...




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