2SB779

Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –25 –20 –7 –1 – 0.5 200 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 max –100 –1 0.16 –0.06 +0.2 s Absolute Maximum Ratings +0.1 (Ta=25˚C) 0.4 –0.05 Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at the low collector voltage. Mini type p...