Document
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A
“HALF-BRIDGE” IGBT
Features
▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current
Applications
▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics
Package : V1
Absolute Maximum Ratings @ Tc = 25℃ (per leg)
Symbol
VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5
Test condition
VGE = 0V,
Rating
600 ± 20
Unit
V V A A A A
IC = 250μA
TC = 70℃ (25℃) TC = 70℃ (25℃) TC = 70℃ (25℃)
100(130) 200(260) 80(100) 200
TC = 100℃ AC 1 minute
10 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5
μs
V ℃ ℃ g Nm Nm
Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)
Symbol
V(BR)CES VCE(ON) VGE(th) ICES IGES VFM
Parameter
Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop
Min
600 3.0 -
Typ
2.2 4.5 1.6
Max
2.7 6.0 500 ±100 1.9
Unit
Test condition
VGE = 0V, IC = 250μA
V
IC = 100A, VGE = 15V VCE = VGE, IC = 250μA VCE = 600V VGE = ±20V
μA nA V
VGE = 0V, VCE = 0V, IC = 100A
-1-
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
Switching Characteristics @ Tj = 25℃ (unless otherwise specified)
Symbol
Cies Coss Cres
Parameter
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time
Min
-
Typ
6900 730 190 82 107 282 97 13 140
Max
423 146 20 210
Unit
Test condition
VCE = 30V, VGE = 0V f = 1.0MHz
pF
td(on) tr td(off) tf Irr trr
Tj = 25℃, VCC = 480V ns IC = 60A,
RG = 5.0Ω
VGE = 15V
A ns
Tj = 125℃, VR = 200V IF = 60A
Thermal Characteristics
Symbol
RΘJC RΘJC RΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied)
Min
-
Typ
0.05
Max
0.31 0.7 -
Unit
℃/W
-2-
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
Fig 1. Maximum DC Collector Current vs. Case Temperature
Fig 2. Power Dissipation vs. Case Temperature
Fig 3. Typ. IGBT Output Characteristics
Fig 4. Maximum Forward Voltage Drop vs. Instantaneous Forward Current
-3-
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
Fig 5. Typical Transfer Characteristics
Fig 6. Typ. Capacitance vs. VCE
Fig 7. Typical Gate Charge vs. VGE
Fig 8. Turn-off SOA
-4-
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-5-
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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
Package Outline
(dimensions in mm)
E2
C1
C2E1
Data and specifications subject to change without notice.
May 2006
Headquarter (www.finespn.com)
305-11, Wonnam-Ri, Eumbong-Myun, Asan-City, Chungcheongnam-Do, KOREA Tel)+82-41-544-3585, Fax)+82-41-544-3582
Sales & Marketing
-6Gyeonggi Technopark P1-311 1271-11 Sa1-Dong, Sangnok-Gu, Ansan, KOREA Tel)+82-31-500-3517, Fax)+82-31-500-3510
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.