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FGM100D06V1 Dataheets PDF



Part Number FGM100D06V1
Manufacturers FineSPN
Logo FineSPN
Description HALF-BRIDGE IGBT
Datasheet FGM100D06V1 DatasheetFGM100D06V1 Datasheet (PDF)

www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A “HALF-BRIDGE” IGBT Features ▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current Applications ▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics Package : V1 Absolute Maximum Ratings @ Tc = 25℃ (per leg) Symbol VCES VGES IC .

  FGM100D06V1   FGM100D06V1


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www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A “HALF-BRIDGE” IGBT Features ▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current Applications ▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics Package : V1 Absolute Maximum Ratings @ Tc = 25℃ (per leg) Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 Test condition VGE = 0V, Rating 600 ± 20 Unit V V A A A A IC = 250μA TC = 70℃ (25℃) TC = 70℃ (25℃) TC = 70℃ (25℃) 100(130) 200(260) 80(100) 200 TC = 100℃ AC 1 minute 10 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5 μs V ℃ ℃ g Nm Nm Electrical Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES VFM Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Min 600 3.0 - Typ 2.2 4.5 1.6 Max 2.7 6.0 500 ±100 1.9 Unit Test condition VGE = 0V, IC = 250μA V IC = 100A, VGE = 15V VCE = VGE, IC = 250μA VCE = 600V VGE = ±20V μA nA V VGE = 0V, VCE = 0V, IC = 100A -1- Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 Switching Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol Cies Coss Cres Parameter Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time Min - Typ 6900 730 190 82 107 282 97 13 140 Max 423 146 20 210 Unit Test condition VCE = 30V, VGE = 0V f = 1.0MHz pF td(on) tr td(off) tf Irr trr Tj = 25℃, VCC = 480V ns IC = 60A, RG = 5.0Ω VGE = 15V A ns Tj = 125℃, VR = 200V IF = 60A Thermal Characteristics Symbol RΘJC RΘJC RΘCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.31 0.7 - Unit ℃/W -2- Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 2. Power Dissipation vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics Fig 4. Maximum Forward Voltage Drop vs. Instantaneous Forward Current -3- Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 Fig 5. Typical Transfer Characteristics Fig 6. Typ. Capacitance vs. VCE Fig 7. Typical Gate Charge vs. VGE Fig 8. Turn-off SOA -4- Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case -5- Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 Package Outline (dimensions in mm) E2 C1 C2E1 Data and specifications subject to change without notice. May 2006 Headquarter (www.finespn.com) 305-11, Wonnam-Ri, Eumbong-Myun, Asan-City, Chungcheongnam-Do, KOREA Tel)+82-41-544-3585, Fax)+82-41-544-3582 Sales & Marketing -6Gyeonggi Technopark P1-311 1271-11 Sa1-Dong, Sangnok-Gu, Ansan, KOREA Tel)+82-31-500-3517, Fax)+82-31-500-3510 Datasheet pdf - http://www.DataSheet4U.net/ .


2SD380 FGM100D06V1 SG-215M6


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