2SB791(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD970(K)
Outline...
2SB791(K)
Silicon
PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD970(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
2 kΩ (Typ)
200 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Rating –120 –120 –7 –8 –12 40 150 –55 to +150
Unit V V V A A W °C °C
2SB791(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — 0.5 1.6 1.5 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test hFE VCE(sat)(1) VCE(sat)(2) VBE(sat)(1) VBE(sat)(2) t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) –30 iC(peak...