2SB792

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1 –0.1 –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : I(2SB792) 2F(2SB792A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SB792 2SB792A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30µA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT 200 4 150 –150 –185 –5 130 130 450 330 –1 V MHz pF mV min typ max –1 Unit µA V V Emitter to base voltage Forward current transfer ratio 2SB792 2SB792A Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage *h FE Rank classification Rank hFE R 130 ~ 220 2SB792 2SB792A IR 2FR S 185 ~ 330 IS 2FS T 260 ~ 450 IT — Mar...