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Naina Semiconductor emiconductor Ltd.
Fast Recovery Diode Diode, 3.0A
Features
• • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability
BY397
Mechanical Characteristics • Case: Molded Plastic
• • • • Cathode indicated by Polarity band Mounting position: Any Terminals: Finish Tin plated, , Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approx.)
DO-201AD 201AD (DO-27) (DO
Maximum Ratings (TA = 250C unless otherwise specified specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) ms) single half sine sine-wave superimposed on rated load Symbol VRRM VRMS VDC IF(AV) IFSM BA159 200 140 200 3.0 200 Units V V V A A
Electrical Characteristics (TA = 250C unless otherwise specified) Parameters Maximum DC forward voltage drop @ 3.0A A DC Maximum DC reverse current @ rated DC blocking voltage Maximum reverse recovery time TA = 250C TA = 550C Symbol VF IR tRR BA159 1.3 10 50 500 Units V µA ns
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Typical thermal resistance, junction to ambient Operating and Storage temperature range Symbol RθJA TJ , TStg Values 65 - 65 6 to + 150 Units 0 C/W
0
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Naina Semiconductor emiconductor Ltd.
BY397
Dimensions in inches and (millimeters)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/
.