12NSFR

Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features Diffused Series Industrial grade Available in Normal and Reverse polarity Optional Avalanche Characteristic 12NSF(R) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM It Trr 2 Parameters Maximum avg. forward current @ TE = 0 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) rep) surge current @ 10 msec Maximum peak repetitive surge current 2 Maximum I t rating (non-rep) rep) for 5 to 10 msec Reverse recovery time Values 12 1.4 150 60 250 300 Units A V A A DO-203AA 203AA (DO-4) (DO A sec ns 2 Voltage Ratings (TE = 250C, unless otherwise noted) Type number Voltage Code 10 20 40 60 12NSF(R) 80 100 120 140 160 VRRM, Maximum repetitive peak reverse voltage (V) 100 200 400 600 800 1000 1200 1400 1600 VR(RMS), Maximum RMS reverse voltage (V) 70 140 280 420 560 700 840 980 1120 VR, Maximum DC blocking voltage (V) 100 200 400 600 800 1000 1200 1400 1600 Recommended RMS working voltage (V) 40 80 160 240 320 400 480 560 640 100 IR(AV), Maximum avg. reverse leakage current (µA) 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120 [email protected] www.nainasemi.com Naina Semiconductor emiconductor Ltd. Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Symbol Rth(JC) TJ Tstg W Parameters Maximum thermal resistance, junction to case Operating junc...