160MDS

Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features Easy connections Excellent power volume ratio Insulated type 1 160MDS Voltage Ratings (TJ = 250C unless otherwise noted) VRRM, Max. repetitive peak reverse voltage (V) 800 1000 1200 1400 1600 Type number Voltage code VRSM, Max. nonrepetitive peak reverse voltage (V) 900 1100 1300 1500 1700 IRRM max @ TJ max (mA) MDS - 160 80 160MDS 100 120 140 160 10 Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters Maximum operating junction temperature range Maximum storage temperature range DC operation per module Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque ±10% Approximate weight DC operation per junction 120 Rect conduction angle per module 120 Rect conduction angle per junction Per module, Mounting surface smooth, flat and greased to heatsink to terminal Rth(CS) T Rth(JC) Symbol TJ TStg Values - 40 to + 150 - 40 to + 150 0.12 0.73 0.15 0.88 0.03 4 to 6 3 to 4 176 Units 0 0 C C 0 C/W 0 C/W Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120 [email protected] www.nainasemi.com Naina Semiconductor emiconductor Ltd. Electrical Specifications (TJ = 250C unless otherwise noted) Parameters Maximum DC output current Maximum peak one-cycle forward, non-repetitive surge current 1 160MDS Conditions 120 Rect conduction angle angle, TC = 85 C t = 10ms...