Naina Semiconductor emiconductor Ltd.
Diode – Diode Module
Features
• • • • • Improved glass passivation for high reliab...
Naina Semiconductor emiconductor Ltd.
Diode – Diode Module
Features
Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package
100NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 100 157 2000 18
Units A A A kA s M1 & M2 PACKAGE
2
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 5 0.35
0
Units
0
C
C/W
Electrical Characteristics (TA = 25OC unless otherwise noted)
Parameter Maximum average on-state current, 180 C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage
0
Symbol IT(max) VRRM VFM VISO
Values 100 0 200 to 1600 1.35 2500
Units A V V V
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120
[email protected] www.nainasemi.com
Naina Semiconductor emiconductor Ltd.
100NDD
ALL DIMENSIONS ARE IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120
[email protected] www.nainasemi.com
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