70NTT Modules Datasheet

70NTT Datasheet, PDF, Equivalent


Part Number

70NTT

Description

Thyristor-Thyristor Modules

Manufacture

Naina Semiconductor

Total Page 2 Pages
Datasheet
Download 70NTT Datasheet


70NTT
Naina Semiconductor Ltd.
70NTT
Thyristor – Thyristor Module
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
70
Maximum average RMS forward current
IF(RMS)
160
Maximum non-repetitive surge current @ t
= 10ms
IFSM
1500
Maximum I2t for fusing @ t = 10ms
I2t 11
Units
A
A
A
kA2s
M1 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Values
-65 to +125
1.1
Units
0C
0C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
70
200 to 1600
1.3
100
2
5 to 100
400
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com

70NTT
Naina Semiconductor Ltd.
70NTT
Diode Configuration
ALL DIMENSIONS ARE IN MM
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com


Features Naina Semiconductor emiconductor Ltd. Th yristor – Thyristor Module Features • • • Improved glass passivati on for high reliability Exceptional sta bility at high temperatures High di/dt and dv/dt capabilities Low thermal resi stance 70NTT Maximum Ratings (TA = 25 0C unless otherwise noted) Parameter Ma ximum average forward current @ TJ = 0 85 C Maximum average RMS forward curren t Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 70 160 1500 11 Units A A A k A s M1 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherw ise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Valu es -65 65 to +125 +1 1.1 0 Units 0 C C/W Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average on-state current Maximu m repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage requi.
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