P12NB30 Datasheet, Equivalent, STP12NB30.


Part P12NB30
Description STP12NB30
Feature STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.40 Ω < 0.40 Ω ID 12A 6.5 A TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination.
Manufacture ST Microelectronics
Download P12NB30 Datasheet

P12NB30   P12NB30

Recommended third-party
P12NB30 Datasheet



@ 2014 :: :: Semiconductors datasheet search & download site (Privacy Policy & Contact)