2SB831

2SB831 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min –25 –20 –5 — 85 — — Typ — — — — — — — Max — — — –1.0 240 –0.5 –1.0 Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC = –0.15 A*2 I C = –0.5 A, IB = –0.05 A*2 VCE = –1 V, IC = –0.15 A*2 VCE(sat) VBE V V Notes: 1. The 2SB831 is grouped by hFE as follows. 2. Pulse test Grade Mark hFE B BB 85 to 170 C BC 120 to 240 See characteristic curves of 2SB561. 2 2SB831 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.65 0.16...