2SB852K

Transistors 2SB852K High-gain Amplifier Transistor (−32V, −0.3A) 2SB852K zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. zPackaging specifications Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SB852K SMT3 B U∗ T146 3000 zCircuit diagram C zExternal dimensions (Unit : mm) 2SB852K SOT-346 2.9 0.4 (3) 1.1 0.8 1.6 2.8 0.3Min. (1)Emitter (2)Base (3)Collector (2) (1) 0.95 0.95 1.9 0.15 Each lead has same dimensions B RBE 4kΩ E : Emitter B : Base C : Collector E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ RBE=0Ω Symbol VCBO VCES VEBO IC PC Tj Tstg Limits −40 −32 −6 −0.3 0.2 150 −55 to +150 Unit V V∗ V A W °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗1 Measured using pulse current. ∗2 Transition frequency of the device. Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −40 −32 −6 − − 5000 − − − Typ. − − − − − − − 200 3 Max. − − − −1 −1 − −1.5 − − Unit V V V µA µA − V MHz pF Conditions IC= −100µA IC= −1mA IE...