2SB857

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at T C = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB857 –70 –50 –5 –4 –8 40 150 –45 to +150 2SB858 –70 –60 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max — — — –1 320 — –1 –1 — Min –70 –60 –5 — 60 35 — — — Typ — — — — — — — — 15 Max — — — –1 320 — –1 –1 — V V MHz Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A*2 I C = –0.1 A*2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) I C = –2 A, IB = –0.2 A*2 VCE = –4 V, IC = –1 A*2 VCE = –4 V, I C = –0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse te...