DMN2300UFB

Product Summary BVDSS 20V RDS(ON) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V ID Max TA = +25°C TA 1=.3+22A5°C 1.11A 0.91A DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23  0.5mm Profile – Ideal for Low Profile Applications  On Resistance <200mΩ @ VGS = 4.5V  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  ESD Protected Gate Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Load Switch Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) X1-DFN1006-3 ESD PROTECTED Bottom View S D G Top View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DMN2300UFB-7 NI 7 8 3,000 DMN2300UFB-7B NI 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.c...