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2SB859 Dataheets PDF



Part Number 2SB859
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB859 Datasheet2SB859 Datasheet (PDF)

2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating –100.

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2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating –100 –80 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB859 Electrical Characteristics (Ta = 25°C) Item Symbol Min –80 –5 — 1 Typ — — — — — — — 20 75 Max — — –0.1 200 — –1.5 –2 — — Unit V V mA Test conditions I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –80 V, IE = 0 VCE = –5 V, IC = –1 A*2 VCE = –5 V, IC = –0.1 A*2 VCE = –5 V, IC = –1 A*2 I C = –2 A, IB = –0.2 A*2 VCE = –5 V, IC = –0.5 A*2 VCB = –20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 35 — — — — V V MHz pF Notes: 1. The 2SB859 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) –5 Area of Safe Operation (–10 V, –4 A) IC max(Continuous) DC O pe –2 ra tio TC = 25°C n (–33 V, –12 A) –1.0 –0.5 40 20 Collector current IC (A) –0.2 –0.1 (–80 V, –0.06 A) –0.05 –1 0 50 100 Case temperature TC (°C) 150 –2 –5 –10 –20 –50 –100 Collector to emitter voltage VCE (V) 2 2SB859 Typical Output Characteristics –5 TC = 25°C –160 –140 –120 –100 –80 –60 Typical Transfer Characteristcs –10 VCE = –5 V Collector current IC (A) –3 –1.0 –0.3 –0.1 –0.03 0W =4 PC Collector Current IC (A) –4 –3 –40 –2 –20 mA –1 IB = 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 1,000 VCE = –5 V DC current transfer ratio hFE 300 100 30 10 3 1 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector current IC (A) TC = 75°C 25 –25 –10 –3 –1.0 –0.3 –0.1 –0.03 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB TC = 75°C 25 –25 TC = 75°C 25 –25 –10 –0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector current IC (A) –10 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other .


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