Document
2SB859
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1135
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Rating –100 –80 –5 –4 –8 40 150 –45 to +150
Unit V V V A A W °C °C
2SB859
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –80 –5 —
1
Typ — — — — — — — 20 75
Max — — –0.1 200 — –1.5 –2 — —
Unit V V mA
Test conditions I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –80 V, IE = 0 VCE = –5 V, IC = –1 A*2 VCE = –5 V, IC = –0.1 A*2 VCE = –5 V, IC = –1 A*2 I C = –2 A, IB = –0.2 A*2 VCE = –5 V, IC = –0.5 A*2 VCB = –20 V, IE = 0, f = 1 MHz
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob
60 35 — — — —
V V MHz pF
Notes: 1. The 2SB859 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) –5
Area of Safe Operation (–10 V, –4 A) IC max(Continuous) DC O pe –2 ra tio TC = 25°C n (–33 V, –12 A) –1.0 –0.5
40
20
Collector current IC (A)
–0.2 –0.1 (–80 V, –0.06 A) –0.05 –1
0
50 100 Case temperature TC (°C)
150
–2 –5 –10 –20 –50 –100 Collector to emitter voltage VCE (V)
2
2SB859
Typical Output Characteristics –5 TC = 25°C
–160 –140 –120 –100 –80 –60
Typical Transfer Characteristcs –10 VCE = –5 V Collector current IC (A) –3 –1.0 –0.3 –0.1 –0.03
0W =4 PC
Collector Current IC (A)
–4
–3
–40
–2 –20 mA –1 IB = 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V)
–0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 1,000 VCE = –5 V DC current transfer ratio hFE 300 100 30 10 3 1 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector current IC (A) TC = 75°C 25 –25 –10 –3 –1.0 –0.3 –0.1 –0.03
Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB
TC = 75°C 25 –25
TC = 75°C 25 –25
–10
–0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector current IC (A)
–10
3
Unit: mm
11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08
+0.1
4.44 ± 0.2 1.26 ± 0.15
6.4
+0.2 –0.1
18.5 ± 0.5
15.0 ± 0.3
1.27
2.7 MAX 14.0 ± 0.5 1.5 MAX
7.8 ± 0.5
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-220AB Conforms Conforms 1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other .