2SB860

2SB860 Silicon PNP Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –100 –100 –4 –4 –5 1.8 40 150 –45 to +150 Unit V V V A A W W °C °C 2SB860 Electrical Characteristics (Ta = 25°C) Item Symbol Min –100 –4 — — — 50 25 Note: 1. Pulse test Typ — — — — — — — Max — — –100 –50 –1.0 250 350 Unit V V µA µA V Test conditions I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCE = –80 V, RBE = ∞ VEB = –3.5 V, IC = 0 I C = –1 A, IB = –0.1 A*1 VCE = –4 V I C = –0.5 A*1 I C = –50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CEO I EBO VCE(sat) hFE Maximum Collector Dissepation Curve 60 Collector power dissipaition PC (W) –10 ICmax Collector current IC (A) –3 –1.0 –0.3 –0.1 Area of Safe Operation (–10 V, –4 A) (–40 V, –1 A) 40 20 TC = 25°C DC Operation (–100 V, –50 mA) –0.03 –0.01 –1 0 50 100 Case temperature TC (°C) 150 –3 –10 –30 –100 –300 –1,000 Collector to emitter vol...