Power MOSFET
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N30Q3 IXFH50...
Description
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N30Q3 IXFH50N30Q3
D
G S
Symbol
VDSS VDGR
VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
300
V
300
V
20
V
30
V
50
A
150
A
50
A
1.5
J
50
V/ns
690
W
-55 ... +150 150
-55 ... +150
C C C
300
°C
260
°C
1.13 / 10
4.0 6.0
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
300
V
3.5
6.5 V
100 nA
10 A 500 µA
80 m
VDSS = ID25 =
RDS(on)
300V 50A 80m
TO-268 (IXFT)
TO-247 (IXFH)
G S D (Tab)
G D S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters Battery Chargers Switch-Mode and Reson...
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