Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral ...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout (W)
f (MHz)
Gps (dB)
D (%)
Pulse (100 sec, 20% Duty Cycle)
CW
1250 Peak 1250 CW
230 230
24.0 74.0 22.9 74.6
Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1.8--600 MHz, 1250 W CW, 50 V WIDEBAND
RF POWER LDMOS
TRANSISTORS
Application Circuits (1) — Typical Performance
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
D (%)
27
CW
1300
27
81
40
CW
1300
26
85
81.36
CW
1250
27
84
87.5--108
CW
1100
24
80
144--148
CW
1250
26
78
170--230
DVB--T
225
25
30
352
Pulse
1250
(200 sec,
20% Duty Cycle)
21.5
66
352
CW
1150
20.5
68
500
CW
1000
18
58
1. Contact your local Freescale sales office for additional information on specific circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pout (W)
Test Voltage
Result
230
Pulse
> 65:1 at all 1500 Peak
50
No Device
(100 sec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
Feature...
