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IGBT Module-Chopper
□ : CIRCUIT
50 A, 600V
□ : OUTLINE DRAWING
94 80 ± 0 .2 5 12 11 2
PRHMB50E6
12
11
12 3
7 6
2-Ø 5.5 4 12
(C2E1) 1
(E2) 2
(C1) 3
3-M5
23
23
17
16
7
16
7
16
4-fasten tab #110 t= 0.5 8
.0 30 +1 - 0 .5
LABEL
6
23
35
7(G2) 6(E2)
1
Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
600 ±20 50 100 250 -40~+150 -40~+125 2,500 2 2(20.4)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 50A,VGE= 15V VCE= 5V,IC= 50mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 6.0Ω 20.0Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 2,500 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF
Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time
μs
□フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 50 100 Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A
DC 1ms
Test Condition IF= 50A,VGE= 0V IF= 50A,VGE= -10V di/dt= 100A/μs
Unit V μs
□ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0.50 1.10 Unit ℃/W
00
インター
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PRHMB50E6
Fig.1- Output Characteristics (Typical)
100
Fig.2- Output Characteristics (Typical)
T C=25°C
100
T C=125°C VGE=20V 12V
VGE=20V
90 80
12V 11V
90 80
15V
15V 11V
Collector Current I C (A)
70 60 50 40 30 20 10 0 0 1 2 3 4
Collector Current I C (A)
70 60 50 40 30 20
10V
10V
9V
9V
8V
8V
10 5 0 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16 14 12 10 8 6 4 2 0
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
T C=25°C
16 14 12 10 8 6 4 2 0
T C=125°C IC=25A 50A 100A
IC=25A 50A
100A
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector t.