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PRHMB50E6 Dataheets PDF



Part Number PRHMB50E6
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PRHMB50E6 DatasheetPRHMB50E6 Datasheet (PDF)

www.DataSheet.co.kr IGBT Module-Chopper □ : CIRCUIT 50 A, 600V □ : OUTLINE DRAWING 94 80 ± 0 .2 5 12 11 2 PRHMB50E6 12 11 12 3 7 6 2-Ø 5.5 4 12 (C2E1) 1 (E2) 2 (C1) 3 3-M5 23 23 17 16 7 16 7 16 4-fasten tab #110 t= 0.5 8 .0 30 +1 - 0 .5 LABEL 6 23 35 7(G2) 6(E2) 1 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Ju.

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www.DataSheet.co.kr IGBT Module-Chopper □ : CIRCUIT 50 A, 600V □ : OUTLINE DRAWING 94 80 ± 0 .2 5 12 11 2 PRHMB50E6 12 11 12 3 7 6 2-Ø 5.5 4 12 (C2E1) 1 (E2) 2 (C1) 3 3-M5 23 23 17 16 7 16 7 16 4-fasten tab #110 t= 0.5 8 .0 30 +1 - 0 .5 LABEL 6 23 35 7(G2) 6(E2) 1 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm) 600 ±20 50 100 250 -40~+150 -40~+125 2,500 2 2(20.4) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 50A,VGE= 15V VCE= 5V,IC= 50mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 6.0Ω 20.0Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 2,500 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time μs □フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 50 100 Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A DC 1ms Test Condition IF= 50A,VGE= 0V IF= 50A,VGE= -10V di/dt= 100A/μs Unit V μs □ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0.50 1.10 Unit ℃/W 00 インター Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr PRHMB50E6 Fig.1- Output Characteristics (Typical) 100 Fig.2- Output Characteristics (Typical) T C=25°C 100 T C=125°C VGE=20V 12V VGE=20V 90 80 12V 11V 90 80 15V 15V 11V Collector Current I C (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 Collector Current I C (A) 70 60 50 40 30 20 10V 10V 9V 9V 8V 8V 10 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25°C 16 14 12 10 8 6 4 2 0 T C=125°C IC=25A 50A 100A IC=25A 50A 100A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector t.


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