2SB892

Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB892/2SD1207] ( ) : 2SB892 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz * : The 2SB892/2SD1207 are graded as follows by hFE at 100mA : 100 R 200 140 S 280 200 T 400 280 U 560 EIAJ : SC-51 SANYO : MP B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 100 40 150 12 (22) max (–)0.1 (–)0.1 560 Unit µA µA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ext...