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2SB919 Dataheets PDF



Part Number 2SB919
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Transistor
Datasheet 2SB919 Datasheet2SB919 Datasheet (PDF)

Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec.

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Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A * : The 2SB919/2SD1235 are classified as follows according to hFE at 1A. 70 Q 140 100 R 200 140 S 280 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)60 (–)30 (–)6 (–)8 (–)15 1.75 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 120 max (–)0.1 (–)0.1 280* Unit mA mA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92098HA (KT)/D251MH/4067KI/D152KI, TS No.1046–1/4 Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Switching Time Test Circuit 2SB919/2SD1235 Symbol Conditions VCE(sat) IC=(–)3A, IB=(–)0.15A V(BR)CBO V(BR)CEO V(BR)EBO ton tstg IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA IC=0 See specified Test Circuit See specified Test Circuit tf See specified Test Circuit Ratings min typ (–)60 (–)30 (–)6 0.1 (0.2) 0.5 0.03 max 0.4 (–0.5) Unit V V V V V µs µs µs µs No.1046–2/4 2SB919/2SD1235 No.1046–3/4 2SB919/2SD1235 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameter.


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