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Barrier Diode. Z1PK110H Datasheet

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Barrier Diode. Z1PK110H Datasheet
















Z1PK110H Diode. Datasheet pdf. Equivalent













Part

Z1PK110H

Description

Schottky Barrier Diode



Feature


www.DataSheet.co.kr ZOWIE Z1PK110H FEAT URES * Halogen-free type Schottky Barr ier Diode (100V / 1.0 A) OUTLINE DIME NSIONS Case : Z1PAK 0.05 2.00 ± 0.1 1. 30 ± 0.1 * Compliance to RoHS product * * * * Lead less chip form, no lead d amage Low power loss, High efficiency H igh current capability, low VF Plastic package has Underwriters Laboratory Fla mmability Classifica.
Manufacture

Zowie Technology Corporation

Datasheet
Download Z1PK110H Datasheet


Zowie Technology Corporation Z1PK110H

Z1PK110H; tion 94V-0 TM * Patented ZPAK Package Te chnology Unit : mm 0.50 ± 0.1 1.00 Typ. R 0. 3 0.50 ± 0.1 APPLICATION * * * * * Switching mode power supply applications Portable equipment battery applications High frequency rectificat ion DC / DC Converter Telecommunication + 0.2 0.80 - 0.1 1.00 ± 0.1 Equival ent : SOD-323 0.45 ± 0.1 MECHANICAL DATA Case : Packed wit.


Zowie Technology Corporation Z1PK110H

h FRP substrate and epoxy underfilled Te rminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026 . Polarity : Laser Cathode band marking Weight : 0.005 gram MARKING Cathode m ark Amps class A 10. Voltage class Hal ogen-free type PACKING * 3,000 pieces per 7" (178mm ± 2mm) reel * 5 reels pe r box * 6 boxes per carton Absolute Ma ximum Ratings (Ta =.


Zowie Technology Corporation Z1PK110H

25 C) ITEM Repetitive peak reverse volt age Average forward current Peak forwar d surge current Operating junction temp erature Range Storage temperature Range o Symbol VRRM IF(AV) IFSM Tj TSTG C onditions Rating 100 1.0 Unit V A A o o 8.3ms single half sine-wave 15 -5 5 to +150 - 55 to +150 C C Electrical characteristics (Ta = 25 C) ITEM Symbo l Conditions Min. .





Part

Z1PK110H

Description

Schottky Barrier Diode



Feature


www.DataSheet.co.kr ZOWIE Z1PK110H FEAT URES * Halogen-free type Schottky Barr ier Diode (100V / 1.0 A) OUTLINE DIME NSIONS Case : Z1PAK 0.05 2.00 ± 0.1 1. 30 ± 0.1 * Compliance to RoHS product * * * * Lead less chip form, no lead d amage Low power loss, High efficiency H igh current capability, low VF Plastic package has Underwriters Laboratory Fla mmability Classifica.
Manufacture

Zowie Technology Corporation

Datasheet
Download Z1PK110H Datasheet




 Z1PK110H
www.DataSheet.co.kr
ZOWIE
Schottky Barrier Diode
Z1PK110H
FEATURES
* Halogen-free type
* Compliance to RoHS product
* Lead less chip form, no lead damage
* Low power loss, High efficiency
* High current capability, low VF
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
* Patented ZPAKTM Package Technology
APPLICATION
* Switching mode power supply applications
* Portable equipment battery applications
* High frequency rectification
* DC / DC Converter
* Telecommunication
OUTLINE DIMENSIONS
Case : Z1PAK
2.00 ± 0.1
0.50 ± 0.1
0.80+-
0.2
0.1
1.00 ± 0.1
(100V / 1.0 A)
Unit : mm
0.05
R 0.3
0.50 ± 0.1
0.45 ± 0.1
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.005 gram
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 5 reels per box
* 6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
Equivalent : SOD-323
MARKING
Cathode mark
Voltage class
A
10.
Amps class
Halogen-free type
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
Symbol
Conditions
VRRM
IF(AV)
IFSM
Tj
TSTG
8.3ms single half sine-wave
Rating
100
1.0
15
-55 to +150
- 55 to +150
Unit
V
A
A
oC
oC
Electrical characteristics (Ta = 25 oC)
ITEM
Forward voltage (NOTE 1)
Symbol
Conditions
VF IF = 1.0 A
Repetitive peak reverse current (NOTE 1)
IRRM
VR = Max. VRRM , Ta = 25 oC
Junction capacitance
Cj
Thermal resistance
Rth(JA)
Rth(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 1.0 x 0.5mm copper pad areas.
VR = 4V, f = 1.0 MHz
Junction to ambient
Junction to lead
REV. 0
Min. Typ. Max. Unit
-
0.78
0.82
V
- - 1.0 uA
- 30 - pF
- 112 - oC/W
- 18 - oC/W
2011/10
Datasheet pdf - http://www.DataSheet4U.net/




 Z1PK110H
www.DataSheet.co.kr
ZOWIE
Z1PK110H
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 1.0 X 0.5mm
COPPER PAD AREAS
0.5
15
10
5
(100V / 1.0 A)
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, oC
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1.00
0.10
0.01
Ta=25oC
1000
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
TJ=100oC
10
1.0
0.10
TJ=25oC
.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE, (V)
0.01
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
TJ=25oC
f=1.0MHz
Vsig=50mVP-P
10
1
.1
1.0 10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2011/10
Datasheet pdf - http://www.DataSheet4U.net/








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