Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching Complem...
Power
Transistors
2SB939, 2SB939A
Silicon
PNP epitaxial planar type Darlington
For midium-speed power switching Complementary to 2SD1262 and 2SD1262A
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –60 –80 –60 –80 –7 –12 –8 45 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB939 2SB939A 2SB939 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SB939A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
10.0±0.3
6.0±0.3
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB939 2SB939A 2SB939 2SB939A
1:Base 2:Collector 3:Emitter N Type Package (DS)
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4...