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CPMF-1200-S080B Z-FeTTM Silicon Carbide
N-Channel Enhancement Mode Bare Die
Features
MOSFET
Package
VDS RDS(on) Qg
= 1200 V = 80 mΩ = 90.8 nC
Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive
G G
D D
Benefits
Higher System Efficiency Reduced Cooling...
