CPMF-1200-S160B

www.DataSheet.co.kr CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die Features MOSFET Package VDS RDS(on) Qg = 1200 V = 160 mΩ = 47 nC Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive D D Gate Source Source Benefits G G Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increase System Switching Frequency DIE S S Part Number CPMF-1200-S160B Package DIE Applications Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 26.1 14.7 56 1.1 400 10 -5/+25 177.4 -55 to +135 260 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note 1 ID IDpulse EAS EAR IAR VGS Ptot TJ , Tstg TL Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Current Gate Source Voltage Power Dissipation Operating Junction and Storage Temperature Solder Temperature A J mJ A V W ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C, tp = 1ms ID = 10A, VDD = 50 V, L = 9.5 mH tAR limited by Tjmax ID = 10A, VDD = 50 V, L = 3 mH tAR limited by Tjmax 1 TC=25˚C 1 1.6mm (0.063”) from case for 10s Note: 1. Assumes a thermal resistance junction to case of ≤ 0.62 °C/W. 1 CPMF-1200-S160B Rev. - Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Electrical Characteristics Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gf...