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IRF3205Z. F3205Z Datasheet

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IRF3205Z. F3205Z Datasheet






F3205Z IRF3205Z. Datasheet pdf. Equivalent




F3205Z IRF3205Z. Datasheet pdf. Equivalent





Part

F3205Z

Description

IRF3205Z



Feature


www.DataSheet.co.kr PD - 94653 AUTOMOT IVE MOSFET IRF3205Z HEXFET® Power MOS FET D Features ● ● ● ● ● Ad vanced Process Technology Ultra Low On- Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Al lowed up to Tjmax VDSS = 55V G S RDS( on) = 6.5mΩ ID = 75A Description Spe cifically designed for Automotive appli cations, this HEXFET® Power MOSF.
Manufacture

International Rectifier

Datasheet
Download F3205Z Datasheet


International Rectifier F3205Z

F3205Z; ET utilizes the latest processing techni ques to achieve extremely low on-resist ance per silicon area. Additional featu res of this design are a 175°C junctio n operating temperature, fast switching speed and improved repetitive avalanch e rating . These features combine to ma ke this design an extremely efficient a nd reliable device for use in Automotiv e applications and .


International Rectifier F3205Z

a wide variety of other applications. TO -220AB Absolute Maximum Ratings Parame ter ID @ TC = 25°C Continuous Drain Cu rrent, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Dr ain Current, VGS @ 10V (Package Limited ) Pulsed Drain Current IDM Max. 110 78 75 440 170 Units A ™ PD @TC = 25° C Power Dissipation Lin.


International Rectifier F3205Z

ear Derating Factor VGS Gate-to-Source V oltage EAS (Thermally limited) Single P ulse Avalanche Energy Single Pulse Aval anche Energy Tested Value EAS (Tested ) W W/°C V mJ A mJ d 1.1 ± 20 IAR EAR TJ TSTG Avalanche Current Ù h 180 250 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy O perating Junction and Storage Temperatu re Range g °C 300 (1.

Part

F3205Z

Description

IRF3205Z



Feature


www.DataSheet.co.kr PD - 94653 AUTOMOT IVE MOSFET IRF3205Z HEXFET® Power MOS FET D Features ● ● ● ● ● Ad vanced Process Technology Ultra Low On- Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Al lowed up to Tjmax VDSS = 55V G S RDS( on) = 6.5mΩ ID = 75A Description Spe cifically designed for Automotive appli cations, this HEXFET® Power MOSF.
Manufacture

International Rectifier

Datasheet
Download F3205Z Datasheet




 F3205Z
www.DataSheet.co.kr
AUTOMOTIVE MOSFET
PD - 94653
IRF3205Z
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
D
VDSS = 55V
RDS(on) = 6.5m
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
110
78
75
440
170
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.9
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
3/25/03
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 F3205Z
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IRF3205Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.051 –––
––– 4.9 6.5
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 66A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
71 ––– ––– S VDS = 25V, ID = 66A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 76 110
ID = 66A
Qgs Gate-to-Source Charge
––– 21 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 30 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 28V
tr Rise Time
––– 95 –––
ID = 66A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 45 ––– ns RG = 6.8
––– 67 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 3450 –––
––– 550 –––
––– 310 –––
––– 1940 –––
––– 430 –––
––– 640 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 440
––– ––– 1.3
integral reverse
ep-n junction diode.
V TJ = 25°C, IS = 66A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
e––– 28 42 ns TJ = 25°C, IF = 66A, VDD = 25V
––– 25 38 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.08mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 66A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width 1.0ms; duty cycle 2%.
tested to this value in production.
2 www.irf.com
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 F3205Z
www.DataSheet.co.kr
IRF3205Z
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
4.5V 20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
www.irf.com
120
TJ = 175°C
100
80
60 TJ = 25°C
40
20
0
0
VDS = 10V
20µs PULSE WIDTH
20 40 60 80
ID, Drain-to-Source Current (A)
100
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
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