Power Transistors
2SB951, 2SB951A
Silicon PNP epitaxial planar type Darlington
0.7±0.1
For midium-speed switching Comp...
Power
Transistors
2SB951, 2SB951A
Silicon
PNP epitaxial planar type Darlington
0.7±0.1
For midium-speed switching Complementary to 2SD1277 and 2SD1277A
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
4.2±0.2
Unit: mm
7.5±0.2
s Features
q q q
4.0
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5
emitter voltage 2SB951A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1
2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB951 2SB951A 2SB951 2SB951A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = –1A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 20 0.5 2 1 –60 –80 2000 500 –1.5 –2 V V MHz µs µs µs 10000 m...