Power Transistors
2SB952, 2SB952A
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.3 1.5±0.1
8.5±0.2 ...
Power
Transistors
2SB952, 2SB952A
Silicon
PNP epitaxial planar type
For low-voltage switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –40 –50 –20 –40 –5 –12 –7 30 1.3 150 –55 to +150 Unit V
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB952 2SB952A 2SB952 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
emitter voltage 2SB952A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
14.7±0.5 4.4±0.5 0 to 0.4
V A A W ˚C ˚C
10.0±0.3
1.5–0.4
4.4±0.5
2.0
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB952 2SB952A 2SB952 2SB952A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2...