2SB954

Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification s Features q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –2 –1 30 2 150 –55 to +150 Unit V 2SB954 2SB954A 2SB954 14.0±0.5 base voltage Collector to emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 Collector to 16.7±0.3 7.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB954 2SB954A 2SB954 2SB954A 2SB954 2SB954A (TC=25˚C) Symbol ICEO ICES IEBO VCEO hFE1* hFE2 VCE(sat) VBE fT ton tstg tf Conditions VCE = –30V, IB = 0 VCE = –60V, IB = 0 VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = – 0.2A VCE = –4V, IC = –1A IC = –1A, IB = – 0.125A VCE = –4V, IC = –1A VCE = –5V, IC = – 0.2A, f = 10MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VC...