2SB955

2SB955(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at TC = 25°C 2. PW ≤ 1 ms 1 shot Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 2 Rating –120 –120 –7 –10 –15 10 50 150 –55 to +150 Unit V V V A A A W °C °C PC * Tj Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –200 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.1 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.1 A*1 I D = 10 A*1 VCC = –30 V I C = –5 A, IB1 = –IB2 = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 ...