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3KASMC10A thru 3KASMC43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SMC (DO-214AB)
PRIMARY CHARACTERISTICS
VWM VBR PPPM PD IFSM TJ max. Polarity
10 V to 43 V 11.1 V to 52.8 V
3000 W 6.0 W 200 A 185 °C Uni-directional
Package
SMC (DO-214AB)
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability and automotive requirement
• Available in uni-directional polarity only
Available
• 3000 W peak pulse power capability with a 10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3) Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1) Peak forward surge current 8.3 ms single half sine-wave (2) Power dissipation on infinite heatsink, TL = 75 °C (fig. 6) Maximum instantaneous forward voltage at 100 A (2)
PPPM IPPM IFSM PD VF
3000 See next table
200 6.0 3.5
Operating junction and storage temperature range
TJ, TSTG
-65 to +185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
UNIT W A A W V °C
Revision: 07-Dec-2018
1 Document Number: 88480
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
3KASMC10A thru 3KASMC43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE MARKING
CODE
BREAKDOWN VOLTAGE VBR AT IT (1) (V)
MIN. NOM. MAX.
TEST
CURRENT
IT (mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM REVERSE LEAKAGE AT VWM
IR (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID (μA) TJ = 150 °C
MAXIMUM PEAK PULSE SURGE
CURRENT IPPM (A) (2)
MAXIMUM CLAMPING VOLTAGE
AT IPPM VC (V)
3KASMC10A 3AX 11.1 11.7 12.3
1.0
10
5.0
50 177 17.0
TYPICAL TEMP. COEFFICIENT OF VBR (3)
T (%/°C)
0.069
3KASMC11A 3AZ 12.2 12.9 13.5
1.0
11
5.0
50 165 18.2 0.072
3KASMC12A 3BE 13.3 14.0 14.7
1.0
12
2.0
20 151 19.9 0.074
3KASMC13A 3BG 14.4 15.2 15.9
1.0
13
2.0
20 140 21.5 0.076
3KASMC14A 3BK 15.6 16.4 17.2
1.0
14
1.0
10 129 23.2 0.078
3KASMC15A 3BM 16.7 17.6 18.5
1.0
15
1.0
10 123 24.4 0.080
3KASMC16A 3BP 17.8 18.8 19.7
1.0
16
1.0
10 115 26.0 0.081
3KASMC17A 3BR 18.9 19.9 20.9
1.0
17
1.0
10 109 27.6 0.082
3KASMC18A 3BT 20.0 21.1 22.1
1.0
18
1.0
10 103 29.2 0.083
3KASMC20A 3BV 22.2 23.4 24.5
1.0
20
1.0
10 92.6 32.4
0.085
3KASMC22A 3BX 24.4 25.7 26.9
1.0
22
1.0
10 84.5 35.5
0.086
3KASMC24A 3BZ 26.7 28.1 29.5
1.0
24
1.0
10 77.1 38.9
0.087
3KASMC26A 3CE 28.9 30.4 31.9
1.0
26
1.0
10 71.3 42.1
0.088
3KASMC28A 3CG 31.1 32.8 34.4
1.0
28
1.0
10 66.1 45.4
0.089
3KASMC30A 3CK 33.3 35.1 36.8
1.0
30
1.0
15 62.0 48.4
0.090
3KASMC33A 3CM 36.7 38.7 40.6
1.0
33
1.0
15 56.3 53.3
0.091
3KASMC36A 3CP 40.0 42.1 44.2
1.0
36
1.0
20 51.6 58.1
0.091
3KASMC40A 3CR 44.4 46.8 49.1
1.0
40
1.0
20 46.5 64.5
0.092
3KASMC43A 3CT 47.8 50.3 52.8
1.0
43
1.0
20 43.2 69.4
0.093
Notes
(1) Pulse test: tp 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient air (1)
RJA
Typical thermal resistance, junctio.